[20p-212B-1~14] 11.4 Analog applications and their related technologies

[20p-212B-4] Electrical properties of TiN microwave resonators fabricated on Si(100) substrates

〇Hirotaka Terai¹, Wei Qiu¹ (1.NICT)

Keywords:nitride superconductor, microwave resonator, kinetic inductance

We fabricated and measured half-wavelength coplanar waveguide resonators made of superconducting TiN films deposited on Si (100) substrate. Poly-crystalline TiN films deposited at an ambient temperature has the resistivity over 700 µΩcm, resulting in a long penetration depth exceeding 1200 nm and large shift of the resonance frequency to the lower side. On the other hand, the TiN films deposited at 800℃ has the resistivity below 4 µΩcm, and the penetration depth below 100 nm was obtained.