[20p-221B-1~11] 4.5 Nanocarbon and 2D Materials

▲ [20p-221B-3] Exciton Diffusion in a hBN-encapsulated Monolayer Transition Metal Dichalcogenide

〇(D)Takato Hotta¹、Syohei Higuchi¹、Yosuke Uchiyama¹、Keiji Ueno²、Kenji Watanabe³、Takashi Taniguchi³、Hisanori Shinohara¹、Ryo Kitaura¹ (1.Nagoya Univ.、2.Saitama Univ.、3.NIMS)

キーワード：Monolayer transition metal dichalcogenide, hBN-encapsulation, Exciton diffusion

Optical responses from low-dimensional systems, such as transition metal dichalcogenides (TMDs), is dominated by the excitonic effect even at room temperature, and exciton diffusion is one of the most important processes for understanding optical response of TMDs. To address intrinsic exciton diffusion in TMDs, extrinsic effects, such as substrate effects, need to be suppressed. Here, we have conducted systematic investigations of exciton diffusion in a hBN-encapsulated monolayer MoSe₂. Fabrication of hBN-encapsulated MoSe₂, PL lifetime and temperature dependence of exciton diffusion will be reported in this presentation.