[20p-221B-1~11] 4.5 Nanocarbon and 2D Materials

▲ [20p-221B-6] Doping Control of Valley Depolarization of Neutral Exciton in Monolayer WSe₂

〇Keisuke Shinokita¹、Xiaofan Wang¹、Yuhei Miyauchi¹、Kazunari Matsuda¹ (1.Inst. of Adv. Energy)

キーワード：Valley degrees of freedom, Transition metal dichalcogenides

The carrier screening effect on valley depolarization process of neutral exciton in monolayer WSe₂ was investigated using PL measurement. The weak long-range e-h exchange interactions screened by doped carriers at low temperature suppresses valley depolarization. On the other hand, the relatively weak Coulomb screening at high temperature causes valley depolarization around neutral conditions.