16:15 〜 16:45
▲ [20p-221B-9] [INVITED] Electrochemically doped light-emitting devices of transition metal dichalcogenide monolayers
キーワード：2D material, transition metal dichalcogenide monolayer, light-emitting device
Recently, 2D layered materials have attracted much attention for exploring new electronic, optoelectronic, and photonic applications. Particularly, direct bandgap and unique electronic structure in monolayer transition metal dichalcogenides (TMDCs) provides a platform for exploring novel optoelectronic functionalities and devices. One of the most interesting properties of TMDCs is topological features, such as a non-centrosymmetric two-dimensional crystal and spin-valley coupling, and circularly polarized light emission has been demonstrated. Although the optical properties of TMDCs are very promising, the fabrication of TMDC light-emitting devices are still limited, and this fundamental barrier has made investigating electroluminescence properties of TMDCs inevitably difficult. To overcome this issue, we recently developed the electrochemical method to dope both holes and electrons, and proposed a simple approach to form p-n junction universally in TMDCs.