[20p-222-1~23] 6.2 Carbon-based thin films

[20p-222-4] Dislocation analysis of diamond epitaxial films by SR X-ray topography

〇Shinichi Shikata¹, Yuka Matsuyama¹, Tokuyuki Teraji² (1.Kwansei Gakuin Univ., 2.NIMS)

Keywords:dislocation, diamond, homo-epitaxial grwoth

There is a great need for high-quality diamond with low dislocation density for high-output power device applications. In this study, we attempted to identify dislocations originating from the homo-epitaxial film/substrate interface in relation to the off-angle of the initial substrate by comparing the dislocation images obtained using X-ray topography by synchrotron radiation light source. For homo-epitaxial film growth on (001) substrate tilted by ~3°, three dislocations were found after growth, corresponding to a density of 30 cm^-2. On the other hand, the density of dislocations generated from the film/substrate interface for homo-epitaxial growth on a (001) substrate with zero tilt angle was 240 cm^-2. This fact indicates that the combination of oxygen feeding during growth and lateral growth using a tilted substrate is an effective way to minimize the number of additional dislocations originating from the homo-epitaxial film/substrate interface.