[20p-223-1~11] Current status and future prospect of atomic layer processes

[20p-223-3] Atomic Layer Deposition for Gate Insulator of Organic Thin Film Transistor

〇Masayuki Katayama¹, Tetsuya Katou¹, Hiroo Anan¹ (1.DENSO CORP. ARIC)

Keywords:atomic layer deposition, organic thin film transistor, gate insulator

Organic thin film transistors attract a lot of interest as an active element of the flexible devices. To improve performance of the organic thin film transistor, quality of the gate insulator is important. In this study, deposition of high quality gate insulator for the organic thin film transistor by atomic layer deposition method and stress control of the gate insulator by Nano-laminates were studied.