The 79th JSAP Autumn Meeting, 2018

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21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 234A (234-1)

Masataka Higashiwaki(NICT), Tetsuya Yamamoto(Kochi Univ. of Tech.), Mutsumi Kimura(Ryukoku Univ.)

3:15 PM - 3:30 PM

△ [20p-234A-7] Preparation of SiO2/HfO2 dielectric distributed Bragg reflectors using the reactive helicon-wave-excited-plasma sputtering method

〇Kohei Shima1, Takumi Kasuya1,2, Kazunobu Kojima1,2, Shigefusa Chichibu1,2 (1.IMRAM-Tohoku Univ., 2.Dept. Appl. Phys.-Tohoku Univ.)

Keywords:helicon-wave-excited-plasma sputtering, hafnium oxide, Distributed Bragg reflectors

To realize ZnO-based polariton lasers, fabricating distributed Bragg reflectors (DBRs) with high reflectivities is mandatory. SiO2/HfO2 DBRs were prepared by reactive helicon-wave-excited-plasma sputtering method enabling smooth surface morphologies. They exhibited less absorption loss in ultraviolet region comapred with SiO2/ZrO2 DBRs