[20p-234B-1~17] 22.1 Joint Session M "Phonon Engineering"

[20p-234B-6] Thermal transport in SiGe nanowires at low temperature

〇Noboru Okamoto¹, Ryoto Yanagisawa¹, Mahfuz Alam², Kentaro Sawano², Masahiro Nomura^1,3 (1.IIS Univ. of Tokyo, 2.Tokyo City Univ., 3.JST PRESTO)

Keywords:Phonon, Nanowire, SiGe

SiGe is promising material for thermoelectric device due to its lower thermal conductivity than Si or Ge simplex. Because alloy scattering from two atoms of different mass scatter more high frequency phonon, SiGe has longer mean free path of phonon than Si, so there is a previous research of ballistic heat conduction at room temperature. In this study, we found that the decay time of heat has a different dependency from room temperature at low temperature in SiGe nanowires fabricated by top down processing using RIE, and the mechanism was investigated.