[20p-235-1~15] 13.8 Optical properties and light-emitting devices

[20p-235-8] Study of Hole Transport Materials for Green Light-Emitting Diodes using ZnInGaP/ZnS Quantum Dots

〇Kei Ogura¹, Genichi Motomura¹, Toshimitsu Tsuzuki¹, Yoshihide Fujisaki¹, Junki Nagakubo², Masaaki Hirakawa², Tsutomu Nishihashi² (1.NHK, 2.ULVAC Inc.)

Keywords:Quantum Dot

QD-LEDs are expected to be applied for displays with a wide color gamut because we can control their wavelength and the full width at half maximum (FWHM) of the emission spectrum by using the ability of size control. We developed high-performance Cd-free QDs composed of core/shell spheres of ZnInGaP/ZnS, and fabricated a QD-LED using these Cd-free QDs then examined the relationship between the hole transport materials and EQE. We found that the combination of ZnInGaP/ZnS and a specific hole transport material was effective for realizing high-efficiency QD-LEDs.