[20p-311-1~18] 17.2 Graphene

[20p-311-18] Chemical Etching of Si Utilizing Graphene Oxide as a Catalyst

〇(M2)Ryuko Ishizuka¹, Toru Utsunomiya¹, Takashi Ichii¹, Hiroyuki Sugimura¹ (1.Kyoto Univ.)

Keywords:graphene oxide, etching, semiconductor

Graphene oxide (GO) is a promising material for electrodes, catalysts and semiconductor materials. Chemical etching of Ge substrate by utilizing the catalytic function of GO and reduced GO (rGO) was recently reported. In this study, we attempted chemical etching of Si substrate utilizing GO and rGO as a catalyst.