The 79th JSAP Autumn Meeting, 2018

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Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[20p-331-1~13] 13.7 Compound and power electron devices and process technology

Thu. Sep 20, 2018 1:45 PM - 5:15 PM 331 (International Conference Room)

Kenji Shiojima(Univ. of Fukui), Masashi Kato(NITech)

4:15 PM - 4:30 PM

[20p-331-10] Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure

〇Koushi Hotta1, Yumiko Tomizuka1, Kousuke Itagaki1, Isao Makabe2, Shigeki Yoshida2, Yasuyuki Miyamoto1 (1.Tokyo Tech, 2.Sumitomo Electric Industries)

Keywords:N-polar GaN HEMT, contact resistance