[20p-331-1~13] 13.7 Compound and power electron devices and process technology

[20p-331-13] GaN Surface Cleaning and In-situ formation of SiO₂/GaN structure using Remote Plasma

〇Noriyuki Taoka¹, Nguyen Xuan Truyen^1,2, Taishi Yamamoto^1,2, Akio Ohta², Hisashi Yamada¹, Tokio Takahashi¹, Mitsuhisa Ikeda², Katsunori Makihara², Seiichi Miyazaki^2,3,1, Mitsuaki Shimizu^1,3 (1.AIST-NU GaN-OIL, 2.Nagoya Univ., 3.IMaSS)

Keywords:GaN, MOS interface, Remote plasma