[20p-CE-1~9] Epitaxial Growth and Device Science of GaN

[20p-CE-1] Introduction

〇Kenji Shiraishi¹ (1.Nagoya Univ.)

Keywords:GaN, Semiconductor

Recently, GaN is considered as the key material of power devices. In this symposium, I oberview the epitaxial growth technique and device physics toward GaN power devices.