The 79th JSAP Autumn Meeting, 2018

Presentation information

Print

Special Symposium

Special Symposium » Epitaxial Growth and Device Science of GaN

[20p-CE-1~9] Epitaxial Growth and Device Science of GaN

Thu. Sep 20, 2018 1:30 PM - 5:45 PM CE (Century Hall)

Heiji Watanabe(Osaka Univ.), Kenji Shiraishi(Nagoya Univ.)

2:15 PM - 2:45 PM

[20p-CE-3] New Developments on Nitride Semiconductors by N-polar MOVPE Growth

〇Takashi Matsuoka1, Shigeyuki Kuboya1, Tomoyuki Tanikawa1, Masaya Kanoh2 (1.IMR, Tohoku Univ., 2.NICHIA CORPORATION)

Keywords:Nitride Semiconductors, N-polarity, MOVPE