[20p-CE-1~9] Epitaxial Growth and Device Science of GaN

[20p-CE-5] Recent Progress in Growth Technology of Mg-doped GaN Layers

〇Tetsuo Narita¹, Kazuyoshi Tomita¹, Yutaka Tokuda², Tatsuya Kogiso², Nobuyuki Ikarashi³, Daigo Kikuta¹, Masahiro Horita⁴, Tetsu Kachi³ (1.Toyota CRDL, 2.Aichi Inst. of Tech., 3.IMass, Nagoya Univ., 4.Kyoto Univ.)

Keywords:III-Nitride Semiconductor, Metalorganic vapor phase epitaxy, Deep level

Fabrication of GaN-based power metal-oxide-semiconductor field-effect transistors (MOSFETs) with well-controlled threshold voltages requires not only the growth technology of p-type body layers doped with magnesium at precisely-controlled concentrations but also the better understanding and the suppression of point defects compensating acceptors in the doped layers. In this presentation, we would like to talk about the recent progress in the epitaxial growth technology of Mg-doped p-type GaN layers and focus on the distinctive defects compensating acceptors in the p-type layers.