[20p-CE-1~9] Epitaxial Growth and Device Science of GaN

[20p-CE-6] Control techiniques of gate dielectrics for GaN-related devices

〇Yasuo Koide¹, Toshihide Nabatame¹, Yoshihiro Irokawa¹, Kazutaka Mitsuishi¹ (1.NIMS)

Keywords:Wide Bandgap Semiconductor, GaN, Insulator

Recently, research to develop a vertical power MOSFET using a MOS inversion electronic layer of a p-GaN region as a channel has been actively carried out. National Institute for Materials Science (NIMS) is promoting the characterization of GaN wafer crystal and MOS interfaces, and MOS device structures through MEXT project by working on collecting 28 researchers. In this symposium, we will describe latest research trend including GaN gate dialectics control technology, such as MOS gate insulating film, MOS interface structure, and GaN natural oxide film structure.