The 79th JSAP Autumn Meeting, 2018

Presentation information

Print

Special Symposium

Special Symposium » Epitaxial Growth and Device Science of GaN

[20p-CE-1~9] Epitaxial Growth and Device Science of GaN

Thu. Sep 20, 2018 1:30 PM - 5:45 PM CE (Century Hall)

Heiji Watanabe(Osaka Univ.), Kenji Shiraishi(Nagoya Univ.)

4:45 PM - 5:15 PM

[20p-CE-8] Advanced Gate Dielectrics for GaN-based Power Devices

〇Heiji Watanabe1, Takahiro Yamada1, Mikito Nozaki1, Takuji Hosoi1, Takayoshi Shimura1 (1.Osaka Univ.)

Keywords:GaN, power device, gate dielectric