[20p-PB2-1~18] 9.2 Nanowires and Nanoparticles

▲ [20p-PB2-4] Growth of Au-Sn catalyzed Ge_1-xSn_x nanowires by vapor-liquid-solid method

〇Yonglie Sun^1,2, Ryo Matsumura¹, Wipakorn Jevasuwan¹, Naoki Fukata^1,2 (1.NIMS, 2.Tsukuba Univ.)

Keywords:germanium tin, germanium nanowire

Germanium tin (Ge_1-xSn_x) alloys have been attracting much attention recently for its high carrier mobility and an opportunity for achieving a direct band gap structure by introducing Sn more than 6.5-11 at.%. One-dimensional nanowires (NWs) can release strain to contain more Sn with high crystallinity and be applied for next generation field-effect transistor (FET) and optoelectronics devices.
Here, we present an easy way to grow Ge_1-xSn_x nanowires on Si substrate via vapor-liquid-solid (VLS) mechanism with Au-Sn catalysts. Metal Sn in catalysts was used as Sn source instead of precursor gas and Au to guide Sn incorporation during the VLS growth of Ge nanowires.