13:30 〜 15:30
▲ [20p-PB2-4] Growth of Au-Sn catalyzed Ge1-xSnx nanowires by vapor-liquid-solid method
キーワード：germanium tin, germanium nanowire
Germanium tin (Ge1-xSnx) alloys have been attracting much attention recently for its high carrier mobility and an opportunity for achieving a direct band gap structure by introducing Sn more than 6.5-11 at.%. One-dimensional nanowires (NWs) can release strain to contain more Sn with high crystallinity and be applied for next generation field-effect transistor (FET) and optoelectronics devices.
Here, we present an easy way to grow Ge1-xSnx nanowires on Si substrate via vapor-liquid-solid (VLS) mechanism with Au-Sn catalysts. Metal Sn in catalysts was used as Sn source instead of precursor gas and Au to guide Sn incorporation during the VLS growth of Ge nanowires.
Here, we present an easy way to grow Ge1-xSnx nanowires on Si substrate via vapor-liquid-solid (VLS) mechanism with Au-Sn catalysts. Metal Sn in catalysts was used as Sn source instead of precursor gas and Au to guide Sn incorporation during the VLS growth of Ge nanowires.