[20p-PB2-1~18] 9.2 ナノワイヤ・ナノ粒子

▼ [20p-PB2-6] Dopant-free asymetric heterocontacts with Si nanowire solar cells using MoOx

〇(P)Thiyagu Subramani¹、Junyi Chen^1,2、Wipakorn Jevasuwan¹、Ryo Matsumura¹、Naoki Fukata^1,2 (1.NIMS、2.Univ. of Tsukuba)

キーワード：Silicon nanowire, Dopant-free, hybrid solar cells

In this work, we concentrate on evaluating alternative contact layers based on metal oxides with high work functions, a class of materials which is widely used for organic electronic devices to form hole-selective contacts. Selective carrier contacts molybdenum oxide (MoOx) films are very attractive for hole contacts, because of their simple, direct deposition processes at room temperature. Herein, we fabricate low-temperature processed dopant-free silicon nanostructure hybrid solar cells by depositing MoOx between the Si absorber and front electrodes in nanostructured Si solar cells. Our nanostructured Si solar cells achieve a PCE of up to 12.42%, with an open circuit voltage (VOC) of 511 mV, a short circuit current density (JSC) of 34.49 mA/cm², and a fill factor (FF) of 70%.