[21a-131-1~11] 10.4 Semiconductor spintronics, superconductor, multiferroics

[21a-131-3] Quantum Hall Effect with Gate Tuning in an AlN/GaN Single Heterostructure

〇Kyoichi Suzuki¹, Tetsuya Akasaka² (1.Fukuoka Inst. Tech, 2.NTT Basic Research Labs., NTT Corporation)

Keywords:quantum Hall effect, gate modulation, atomic layer deposition

The transport properties in an AlN/GaN single heterostructure grown on a GaN substrate were investigated over a temperature range between 0.25 K and 300 K under magnetic fields of up to 15 T. The electron density was successfully controlled over the entire temperature range by applying gate voltage through an Al₂O₃ gate insulator. At low temperatures, clear Landau level quantization, which depends on the electron density, was observed.