[21a-135-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21a-135-5] Electron Field Emission from Multiply-Stacked Structures consisting of Ge-Core Si Quantum Dots and Si Quantum Dots

〇(M2)Yuto Futamura¹, Katsunori Makihara¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Keywords:Si-QDs, Ge core, electron emission