[21a-135-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [21a-135-7] NEGF simulation of inter-layer tunneling in 2D materials

〇Takaya Mishima¹, Futo Hashimoto¹, Nobuya Mori¹ (1.Osaka Univ.)

Keywords:tunnel FET, two-dimensional materials, interlayer tunneling process

It is expected that good device characteristics can be obtained by using a two-dimensional material such as MoS 2 for the tunnel FET channel. In the 2D TFET, the tunnel current flows perpendicular to the electron transport direction, which is different from the tunneling effect handled by the elementary quantum mechanics. Therefore, for device simulation of 2D TFET, interlayer tunneling process perpendicular to the direction of electron transport was analyzed using the non-equilibrium green function method.