[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[21a-141-13] Low-temperature photoluminescence characteristics of single-photon sources formed on the SiC semiconductor surface

〇Shunsuke Otojima¹, Yuichiro Matsushita², Takeshi Ohshima³, Yasuto Hijikata¹ (1.Saitama Univ., 2.Tokyo Tech., 3.QST)

Keywords:single-photon souses

Recently, it has been reported that a single photon source (SPS) with high brightness is formed in the vicinity of SiC / SiO 2 interface in SiC crystal dry oxidized at 800 ° C. This is called surface SPS. However, this surface SPS has strong emission from Phonon side-band (PSB) at room temperature, and details of Zero-phonon line (ZPL) which is inherent light emission are not clarified. Therefore, I will report on the light emission characteristics at low temperature this time.