[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[21a-141-4] Surface recombination velocities for the Si- and C-faces of 4H-SiC: re-examination through experimental and analytical accuracy improvements

〇Masashi Kato¹, Xinchi Zhang¹, Kimihiro Kohama¹, Masaya Ichimura¹ (1.NITech)

Keywords:SiC, carrier lifetime, surface recombination velocity

To accurately estimate the carrier lifetime of semiconductors and to use it in the design of bipolar devices, an accurate value of the surface recombination velociteis is indispensable. We have evaluated S for 4H-SiC and have published values on the Si face and C face of n-type 4H-SiC. However, in measurement and analysis in the past, factors that lead to inaccuracy existed. In this presentation, we introduce the points that were necessary for accurate measurement and analysis, and correct the conventional value by newly obtained S.