The 79th JSAP Autumn Meeting, 2018

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 21, 2018 9:00 AM - 12:30 PM 141 (141+142)

Kazutoshi Kojima(AIST)

10:00 AM - 10:15 AM

[21a-141-5] Depth-resolved carrier lifetime measurements in 4H-SiC thick epitaxial layers

〇(M1)Takashi Hirayama1, Mitsuhiro Kushibe2, Akira Miyasaka3,4, Kazutoshi Kojima4, Tomohisa Kato4, Hajime Okumura4, Masashi Kato1 (1.NITech, 2.TOSHIBA, 3.Showa Denko, 4.AIST)

Keywords:SiC, carrier lifetime, free carrier absorption