[21a-141-1~13] 15.6 Group IV Compound Semiconductors (SiC)

[21a-141-7] Control of minority carrier lifetime of p-type 4H-SiC epitaxial layer by V doping

〇Koichi Murata¹, Takeshi Tawara^2,3, Anli Yang¹, Tetsuya Miyazawa¹, Hidekazu Tsuchida¹ (1.CRIEPI, 2.AIST, 3.Fuji Electric Co.)

Keywords:SiC, Epitaxial growth, Doping

Employing a buffer layer (recombination enhancing layer) with a short carrier lifetime has been studied to prevent the forward degradation in 4H-SiC PiN diodes. We have demonstrated that V doping is effective to reduce carrier lifetimes in N-doped n-type epilayers. In this presentation, we will report on the epitaxial growth of Al+V-doped p-type epilayers and their deep levels and carrier lifetimes.