[21a-145-1~9] 13.3 Insulator technology

[21a-145-1] Theoretical study on Si missing in Si pillar oxidation

〇Hiroyuki Kageshima^1,4, Kenji Shiraishi^2,4, Tetsuo Endoh^3,4 (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ., 4.JST-ACCEL)

Keywords:Si oxidation process, theoretical study, Si pillar

Vertical BC-MOSFET is a promising candidate of next generation device. However, the 'Si missing' disturbs the device shape by the thermal oxidation process for fabricating the gate oxide. We theoretically discuss the physical mechanism of this 'Si missing'. We have concluded that the oxide viscous flow mechanism is the most promising at present.