The 79th JSAP Autumn Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21a-146-1~12] 15.4 III-V-group nitride crystals

Fri. Sep 21, 2018 9:00 AM - 12:15 PM 146 (Reception Hall)

Motoaki Iwaya(Meijo Univ.), Takayuki Nakano(Shizuoka Univ.)

12:00 PM - 12:15 PM

[21a-146-12] Fabrication of 280nm-band AlGaN DUV LD structure and its current injection characteristics

〇Noritoshi Maeda1, Masafumi Jo1, Hirayama Hideki1 (1.RIKEN)

Keywords:LD, AlGaN, current injection