[21a-211B-1~9] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Phonics

▲ [21a-211B-3] 2µm Electro-Absorption Optical Modulation using Strained Germanium-Tin on Silicon

〇(M2C)Yun-Da Hsieh¹、Guo-En Chang¹ (1.Nat. Cheng Cheng Univ.)

キーワード：Optical modulators, GeSn alloys, infrared

GeSn alloys have been recently considered as a new class of group-IV semiconductors for silicon photonics. Introducing Sn into Ge can effectively engineer the bandgap, allowing for extending the absorption edges to mid-infrared (MIR) region. This unique property has led to the development of GeSn photodetectors with extended optical responses. In addition to photodetectors, another important photonic active device is optical modulators. Here, we present an investigation of optical modulation in GeSn alloys based on the Franz-Keldysh (FK) effect for 2 µm band applications. We fabricated normal-incident GeSn optical modulators and experimentally demonstrate optical modulation at 2 µm wavelengths.