[21a-232-1~12] 6.2 Carbon-based thin films

[21a-232-3] The charge state of NV center in diamond n-i-n junction

〇Maki Shimizu¹, Toshiharu Makino², Hiromitsu Kato², Masanori Fujiwara³, Takayuki Iwasaki⁴, Satoshi Yamasaki², Norikazu Mizuochi³, Mutsuko Hatano⁴ (1.Tokyo Univ. of Science, 2.AIST, 3.Kyoto Univ., 4.Tokyo Tech.)

Keywords:Diamond, junction, NV center

Charge state control of NV center is a important issue for applications because NV^- is sometimes unstable and may transition to a neutral NV (NV⁰) center.In the present study, we fabricated multilayer of n-type-intrinsic-n-type (n-i-n) junction to control the charge state in i-layer with low impurity concentration where long spin coherence time of is expected. The charge state depends on the band structure calculated by the Poisson equation for both of single and ensemble NV centers.