Si minimal CVD process measurement by exhaust gas using quartz crystal microbalance

Mitsuko Muroi; Hitoshi Habuka; Takanori Mikahara; Shin-ichi Ikeda; Yuuki Ishida; Shiro Hara

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Fri. Sep 21, 2018 9:00 AM - 12:00 PM 233 (233)

Takashi Noguchi(Univ. of the Ryukyus), Taizoh Sadoh(Kyushu Univ.)

10:30 AM - 10:45 AM

[21a-233-7] Si minimal CVD process measurement by exhaust gas using quartz crystal microbalance

Mitsuko Muroi¹, 〇Hitoshi Habuka¹, Takanori Mikahara^2,3, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama Nat. Univ., 2.MINIMAL, 3.AIST)

Keywords:MINIMAL FAB, Chemical Vapor Deposition, Observation

Si epitaxial film formation process in the Minimal Fab was measured using the quartz crystal microbalance set st the exhaust of reactor.