[21a-311-1~14] 17.2 Graphene

[21a-311-9] Influence of C-rich domain in h-BN/graphene/h-BN van der Waals heterostructures

〇Momoko Onodera¹, Kenji Watanabe², Miyako Isayama¹, Miho Arai¹, Satoru Masubuchi¹, Takashi Taniguchi², Tomoki Machida^1,3 (1.IIS, Univ. of Tokyo, 2.NIMS, 3.CREST-JST)

Keywords:graphene, h-BN, 2D

High-pressure-high-temperature-synthesized h-BN crystals have regions (domains) at their center which contain high carbon impurity density. To evaluate the influence of the domain on carrier transport properties of graphene above, we fabricated h-BN/graphene/h-BN van der Waals heterostructures, where the graphene is located across the border of the C-rich h-BN domain. Graphene on the C-rich h-BN domain exhibits lower carrier mobility and anomalously bended Landau-fan diagram at the electron-doped side. These results are reproduced qualitatively in different samples, thus the h-BN domain affects the transport properties of graphene.