[21a-331-1~12] 13.7 Compound and power electron devices and process technology

[21a-331-12] Effect of Interface State at AlGaN/GaN Interfaces on I-V characteristics of GaN p-MOSFETs on Polarization-Junction Substrates

〇Shuma Tsuruta¹, Takuya Hoshii¹, Akira Nakajima², Shin-ichi Nishizawa³, Hiromichi Ohashi¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST, 3.Kyushu Univ.)

Keywords:GaN p-MOSFETs