[21a-331-1~12] 13.7 Compound and power electron devices and process technology

[21a-331-9] AlGaN/GaN HEMTs fabricated using AlGaN regrowth on RIE-GaN surfaces

〇Akio Yamamoto¹, Keito Kanatani¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)

Keywords:GaN, RIE, HEMT

As a part of the evaluation of 2DEG properties in AlGaN/GaN structures prepared by the AlGaN regrowth on RIE-GaN surfaces, the fabrication and DC characteristics of HEMTs employing such AlGaN/GaN structures were investigated. It was confirmed that the HEMTs fabricated had excellent DC properties such as a drain current of ≥ 0.5 A/mm, good pinch-off properties and very small hysteresis (ΔV ≤ 30 mV). Based on these achievements, a trenched vertical AlGaN/GaN HEMT was realized.