[21a-431B-1~8] 15.1 Bulk crystal growth

[21a-431B-7] Investigation on crucible for silicon germanium crystal growth

Masaya Nishina¹, Koji Ogawa¹, Koyuki Kawakami¹, 〇Toshinori Taishi¹ (1.Shinshu Univ.)

Keywords:silicon germanium, crucible, control of carrier concentration

We investigate suitable crucible for bulk silicon-germanium crystal growth in a crucible, such as TLZ and vertical Bridgman technique, from the reaction between crucible and SiGe melt.