[21a-CE-1~10] 13.5 Semiconductor devices and related technologies

[21a-CE-2] Super Steep Switching in TFET Having Trimmed Gate Structure

〇Hidehiro Asai¹, Takahiro Mori¹, Takashi Matsukawa¹, Junichi Hattori¹, Kazuhiko Endo¹, Koichi Fukuda¹ (1.AIST)

Keywords:TunnelFET, Subthreshold swing

We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS).