2018年第79回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

13 半導体 » 13.5 デバイス/集積化技術

[21a-CE-1~10] 13.5 デバイス/集積化技術

2018年9月21日(金) 09:00 〜 11:30 CE (センチュリーホール)

太田 裕之(産総研)

10:30 〜 10:45

[21a-CE-7] Steep Subthreshold Slope in Ferroelectric FET by Transient Negative Capacitance Effect with Polarization Switching Delay

〇(D)Chengji Jin1、Takuya Saraya1、Toshiro Hiramoto1、Masaharu Kobayashi1 (1.IIS, Univ. of Tokyo)

キーワード:Negative capacitance, FeFET, Steep slope

Transient behavior of FeFET is simulated based on time-delayed Preisach model calibrated by transient measurement of ferroelectric HfO2. Transient NC effect caused by polarization switching delay results in sub-60 mV/dec SS with practical material, device and measurement parameters. The model provides a reasonable interpretation to the previously reported steep SS in NCFET.