The 79th JSAP Autumn Meeting, 2018

Presentation information

Poster presentation

12 Organic Molecules and Bioelectronics » 12.1 Fabrications and Structure Controls

[21a-PA2-1~28] 12.1 Fabrications and Structure Controls

Fri. Sep 21, 2018 9:30 AM - 11:30 AM PA (Event Hall)

9:30 AM - 11:30 AM

[21a-PA2-19] Fabrication of IGZO Step-edged Vertical Channel Field-Effect Transistor and Antenna by Low Temperature Ultra Sonic Method for Low Cost Flexible RFID Tag Application

Yuki Sato1, Wataru Kakuta1, Hiroshi Yamauchi1, Yugo Okada2, Masatoshi Sakai1, Masaaki Iizuka3, Kazuhiro Kudo1 (1.Graduate School of Science and Engineering, Chiba Univ., 2.Center for Frontier Science, Chiba Univ., 3.Faculty of Education, Chiba Univ.)


In this study, Field Effect Transistor (FET) and antenna for flexible information tag are fabricated on film. Utilizing thermal nanoimprint lithography technology, a vertical type FET (SVC-FET) using a step-edge structure was fabricated. For the active layer, IGZO was fabricated by RF sputtering method and coating method because it can be formed at low temperature. The antenna uses a low cost copper ink as compared with silver and can be sintered at a low temperature of 200 ° C or less by ultrasonic method.