[21p-131-1~6] 10.4 半導体スピントロニクス・超伝導・強相関

▼ [21p-131-2] Material dependence of interfacial spin-momentum locked bands in metallic heterostructures

〇Hana Hirose¹、Naoto Ito¹、Masashi Kawaguchi¹、Masamitsu Hayashi^1,2 (1.the Univ. of Tokyo、2.National Inst. for Materials Science)

キーワード：circular photogalvanic effect

Anisotropic photocurrents appear under illumination of circularly polarized light due to spin-momentum locked bands. This effect is referred to as the circular photogalvanic effect (CPGE). We have studied the CPGE in (semi)metallic heterostructures and successfully observed signals due to spin-momentum locked bands at interfaces. We discuss the dependence of the CPGE-induced photocurrent on the materials that constitute the heterostructures.