[21p-131-1~6] 10.4 Semiconductor spintronics, superconductor, multiferroics

▲ [21p-131-4] Induced spin-orbit coupling in silicon thin films by bismuth doping

〇(P)Fabien Rortais¹, Soo Beom Lee¹, Ryo Ohshima¹, Sergey Dushenko¹, Masashi Shiraishi¹ (1.Kyoto Univ)

Keywords:silicon, semiconductor, spintronics

Si possesses a low spin-orbit coupling, it allows a long spin lifetime but limits new device-designing possibilities in spintronics, particularly with the spin-charge conversion effects-the Spin Hall effect (SHE) and the Inverse Spin Hall effect (ISHE). However, if it can be engineered to possess a significant spin-orbit coupling, such additional functionality will pave the way to create all-Si spin devices consisting of injector, detector and transport medium made of Si. The purpose of this study is to create a sizable spin-orbit interaction in Si by implantation of a heavy element, bismuth (Bi).
To compare the spin-orbit coupling strength in the Si channel with and without Bi doping (samples SOI:P:B and SOI:P, respectively), we measured quantum corrections to the conductance in function of temperature.