The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21p-135-1~16] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 21, 2018 1:00 PM - 5:15 PM 135 (135)

Tomo Ueno(TUAT), Koichiro Saga(Sony)

1:15 PM - 1:30 PM

[21p-135-2] Development of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

Hiroki Matsuyama1, Shotaro Kuzukawa1, Narumi Abe1, Yuki Kumagae1, Yusuke Nakayama2, Shunsuke Nakamura2, Kotaro Nagatomo2, Kazuhiro Kobayashi1, Hiroshi Kubota1, Takeshi Hashishin1, Masao Yoshioka2 (1.Graduate school of science and technology Kumamoto Univ., 2.Kumamoto Univ.)

Keywords:Interface level