[21p-141-1~8] 日韓の有機エレクトロニクス研究II：基礎研究と応用研究の視点から

▲ [21p-141-2] Molecular spinterface induced antiferromagnetic exchange bias

〇Jung-Woo Yoo¹ (1.MSE, UNIST)

キーワード：Exchange bias, Molecular spinterface

Exchange bias (EB) effect is one of the integral part in spintronics applications, which is triggered by a magnetic coupling at the interface between a ferromagnetic (FM) and an antiferromagnetic material (AFM). This effect has been recently received growing attention in a logical memory device because it can act as 'effective magnetic field' without external magnetic field. In this presentation, I will discuss the giant EB effect at the interface between antiferromagnetic molecular layers and ferromagnetic thin films. Anisotropic magnetoresistance and SQUID-VSM analyses displays large variation of EB field depending on the stacking molecular layer. The obtained molecular EB field could be as high as ~ 2000 Oe. A density functional theory (DFT) calculation shows correlation between EB bias and interlayer coupling. These controllable and tunable organic/inorganic ‘spinterface’ will provide opportunity to realize new functionalities in hybrid magnetic devices.