[21p-211B-1~9] 4.2 Photonics Devices, Photonic Integrated Circuit and Silicon Phonics

▼ [21p-211B-6] Object Orientated Monte-Carlo Model Incorporating Quantum Dot Size Anisotropy Effects in State-of-the-art Quantum Dot Lasers

〇(D)Iain Butler^1,2、Wei Li³、Sorush Sobhani¹、Nasser Babazadeh¹、Ian Ross³、Kenichi Nishi⁴、Keizo Takemasa⁴、Mitsuru Sugawara⁴、David Childs¹、Richard Hogg¹ (1.Univ. of Glasgow、2.Queen's Univ. Belfast、3.Univ. of Sheffield、4.QD Laser Inc.)

キーワード：quantum dots, modeling, laser

Stranski-Krastanov self-assembled quantum dots (QDs) are now available in commercial devices with wide-ranging applications such as optical communication and sensing. The prediction of temperature insensitive laser operation has been a key interest, and due to development in epitaxial process for high quality GaAs based InAs QD materials, this is now possible. The control of inhomogeneous broadening, while simultaneously achieving high QD densities are vital to the commercial success of such QD based devices.
Using high angle annular dark field scanning transmission electron microscopy (HAADF-STEM) imaging, micro-structural analysis of the active region of QD lasers is made possible. A size distribution anisotropy was observed for the QD ensemble through the measurement of orthogonal intensity line profiles across the HAADF STEM images.
A computationally efficient 3D model was developed to successfully link the size distribution to observed opto-electric properties. Here we describe the development of the Monte-Carlo model, which describes the shape of the ensemble gain of QD laser material based on the measured QD ensemble.
We shall discuss the results and implications of this model based on image data from TEM analysis of a real ensemble, rather than a Gaussian approximation. We discuss the sensitivity of QD based device performance on the observed QD size distribution anisotropy.