[21p-232-1~18] 6.2 Carbon-based thin films

△ [21p-232-11] High on-current density and low on-resistance in Vertical-Type 2DHG Diamond MOSFET with Overlapping Gate Electrode Structure

〇(B)Jun Nishimura¹, Masayuki Iwataki¹, Nobutaka Oi¹, Kiyotaka Horikawa¹, Shoutaro Amano¹, Taisuke Kageura¹, Masafumi Inaba², Atsushi Hiraiwa^1,2, Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.Nagoya Univ., 3.Waseda ZAIKEN.)

Keywords:diamond, vertical-type, field effect transistor

We fabricated the vertical-type 2DHG diamond MOSFET with overlapping gate electrode structure, in order to reduce the source resistance and miniaturize the device. Compared to the general vertical-type diamond MOSFET, we confirmed that the current density・specific on-resistance characteristic was improved due to the achievement of miniaturization of the device area.