[21p-232-1~18] 6.2 Carbon-based thin films

△ [21p-232-13] Switching Characteristics of Diamond Electrolyte Solution Gate FET, and its Dependence on the Distance between Reference Electrode and the Channel

〇(B)Kaito Tadenuma¹, Yutaro Iyama¹, Miki Kajiya¹, Shaili Falina¹, Mohd Syamsul¹, Yu Hao Chang¹, Yukihiro Shintani¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Waseda ZAIKEN)

Keywords:diamond, switching characteristics, field effect transistor

We have reported the electrical characteristics of diamond electrolyte solution gate FETs(SGFETs), which operates without gate insulation film in electrolyte solution due to wide potential window so far. In this study, we evaluated the switching characteristics of diamond electrolyte solution gate FET(SGFET), and its dependence on the distance between Reference Electrode and the Channel. We found that SGFET responded to reverse 100kHz pulse input signal through 0.01m and 5m, and could get comparable saturation current regardless of distance.