The 79th JSAP Autumn Meeting, 2018

Presentation information

Symposium (Oral)

Symposium » The role of functional oxides in high-frequency devices for IoT

[21p-CE-1~5] The role of functional oxides in high-frequency devices for IoT

Fri. Sep 21, 2018 1:30 PM - 5:25 PM CE (Century Hall)

Hidekazu Tanaka(Osaka University), Osamu Nakagawara(Murata Manufacturing)

4:05 PM - 4:45 PM

[21p-CE-4] Development of Gallium Oxide Transistors Toward High-Frequency Device Applications

Masataka Higashiwaki1, Man Hoi Wong1, Akinori Takeyama2, Takahiro Makino2, Takeshi Ohshima2, Kohei Sasaki3, Akito Kuramata3, Shigenobu Yamakoshi3 (1.NICT, 2.QST, 3.Tamura Corp.)

Keywords:gallium oxide (Ga2O3)

In this talk, after introducing material properties and features of Ga2O3, we will discuss application fields such as high-frequency and extreme-environment (high-temperature, radiation-hard etc) electronics that are suitable for Ga2O3 transistors. Then, DC device characteristics, high-frequency device characteristics, radiation hardness of lateral Ga2O3 MOSFETs developed in our group will be presented.