[21p-CE-1~5] The role of functional oxides in high-frequency devices for IoT

[21p-CE-4] Development of Gallium Oxide Transistors Toward High-Frequency Device Applications

〇Masataka Higashiwaki¹, Man Hoi Wong¹, Akinori Takeyama², Takahiro Makino², Takeshi Ohshima², Kohei Sasaki³, Akito Kuramata³, Shigenobu Yamakoshi³ (1.NICT, 2.QST, 3.Tamura Corp.)

Keywords:gallium oxide (Ga2O3)

In this talk, after introducing material properties and features of Ga₂O₃, we will discuss application fields such as high-frequency and extreme-environment (high-temperature, radiation-hard etc) electronics that are suitable for Ga₂O₃ transistors. Then, DC device characteristics, high-frequency device characteristics, radiation hardness of lateral Ga₂O₃ MOSFETs developed in our group will be presented.