[21p-PB3-1~5] 13.5 Semiconductor devices and related technologies

[21p-PB3-1] Short Channel Effects and Surface Potential of Tunnel FET’s

〇Koichi Fukuda¹, Hidehiro Asai¹, Junichi Hattori¹, Takahiro Mori¹, Yukinori Morita¹, Wataru Mizubayashi¹, Meishoku Masahara¹, Shinji Migita¹, Hiroyuki Ota¹, Kazuhiko Endo¹, Takashi Matsukawa¹ (1.AIST)

Keywords:tunnel FET, Short channel effects, energy band

Short channel effects of tunnel fet's are discussed with semiconductor / gate insulator interface energy band profiles.