[21p-PB3-1~5] 13.5 デバイス／集積化技術

▼ [21p-PB3-4] Role of Traps in Few Layer n-ReS₂ Phototransistor on top of p-MoTe₂ Layer

〇(P)Bablu Mukherjee¹、Mohd Amir Zulkefli¹、Keiji Ueno²、Yutaka Wakayama¹、Shu Nakaharai¹ (1.Natl. Inst. For Materials Science、2.Saitama University)

キーワード：Two-dimensional material, ReS2, Phototransistor

Phototransistor performance is expected to be enhanced by using atomic layers of rhenium disulfide (ReS₂) due to its atomically-thin film structure and direct band gap even in multi layers. By controlling the carrier trapping by forming a type-II hetero-interface, phototransistor performance can be improved even more. Based on this motivation, p-type MoTe₂ has been selected for type-II heterointerface as a bottom layer to trap one type of photogenerated carrier of ReS₂ to have a high photoconductive gain, and we have investigated the role of intrinsic trap states in MoTe₂ to make a high responsive light sensor.